N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT015N10N5ATMA1

RS kodas: 171-1991Gamintojas: InfineonGamintojo kodas: IPT015N10N5ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Serija

IPT015N10N5

Pakuotės tipas

HSOF-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.1mm

Typical Gate Charge @ Vgs

169 nC @ 10 V

Plotis

10.58mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

2.4mm

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€ 3,518

Each (In a Pack of 5) (be PVM)

€ 4,257

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT015N10N5ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 3,518

Each (In a Pack of 5) (be PVM)

€ 4,257

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT015N10N5ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Serija

IPT015N10N5

Pakuotės tipas

HSOF-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.1mm

Typical Gate Charge @ Vgs

169 nC @ 10 V

Plotis

10.58mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

2.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more