N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

RS kodas: 170-2318Gamintojas: InfineonGamintojo kodas: IPT012N08N5ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

HSOF

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Plotis

10.58mm

Number of Elements per Chip

1

Aukštis

2.4mm

Serija

IPT012N08N5

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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Sandėlio informacija laikinai nepasiekiama.

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€ 4,882

Each (On a Reel of 2000) (be PVM)

€ 5,907

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

2000

Galima įsigyti kartotiną kiekį 2000
2000€ 9 765,00
4000€ 19 530,00
6000€ 29 295,00
8000€ 39 060,00
10000€ 48 825,00
12000€ 58 590,00
14000€ 68 355,00
16000€ 78 120,00
18000€ 87 885,00
20000€ 97 650,00
22000€ 107 415,00
24000€ 117 180,00
26000€ 126 945,00
28000€ 136 710,00
30000€ 146 475,00
sticker-462

€ 4,882

Each (On a Reel of 2000) (be PVM)

€ 5,907

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1
Sandėlio informacija laikinai nepasiekiama.

2000

Galima įsigyti kartotiną kiekį 2000
2000€ 9 765,00
4000€ 19 530,00
6000€ 29 295,00
8000€ 39 060,00
10000€ 48 825,00
12000€ 58 590,00
14000€ 68 355,00
16000€ 78 120,00
18000€ 87 885,00
20000€ 97 650,00
22000€ 107 415,00
24000€ 117 180,00
26000€ 126 945,00
28000€ 136 710,00
30000€ 146 475,00
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

HSOF

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Plotis

10.58mm

Number of Elements per Chip

1

Aukštis

2.4mm

Serija

IPT012N08N5

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more