Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
700 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
310 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
104.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Plotis
4.57mm
Transistor Material
Si
Serija
CoolMOS CFD
Minimali darbinė temperatūra
-55 °C
Aukštis
15.95mm
Produkto aprašymas
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,425
Each (In a Tube of 500) (be PVM)
€ 1,724
Each (In a Tube of 500) (su PVM)
500
€ 1,425
Each (In a Tube of 500) (be PVM)
€ 1,724
Each (In a Tube of 500) (su PVM)
500
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
500 - 2000 | € 1,425 | € 712,50 |
2500 - 4500 | € 1,378 | € 688,75 |
5000+ | € 1,378 | € 688,75 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
700 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
310 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
104.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Plotis
4.57mm
Transistor Material
Si
Serija
CoolMOS CFD
Minimali darbinė temperatūra
-55 °C
Aukštis
15.95mm
Produkto aprašymas
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.