N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 Infineon IPP60R199CPXKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS CP
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
490 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 3,57
Each (In a Tube of 50) (be PVM)
€ 4,32
Each (In a Tube of 50) (su PVM)
50
€ 3,57
Each (In a Tube of 50) (be PVM)
€ 4,32
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 3,57 | € 178,50 |
| 100 - 200 | € 3,36 | € 168,00 |
| 250+ | € 3,045 | € 152,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS CP
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
490 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products