N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 Infineon IPP075N15N3GXKSA1

RS kodas: 170-2269Gamintojas: InfineonGamintojo kodas: IPP075N15N3GXKSA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Serija

IPP075N15N3 G

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

4.57mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Aukštis

11.17mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 4,935

Each (In a Tube of 50) (be PVM)

€ 5,971

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 Infineon IPP075N15N3GXKSA1
sticker-462

€ 4,935

Each (In a Tube of 50) (be PVM)

€ 5,971

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 Infineon IPP075N15N3GXKSA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 4,935€ 246,75
100 - 200€ 4,725€ 236,25
250+€ 4,252€ 212,62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Serija

IPP075N15N3 G

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

4.57mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Aukštis

11.17mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more