Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™ 3
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.57mm
Ilgis
10.36mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
15.95mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 59,38
€ 1,188 Each (In a Tube of 50) (be PVM)
€ 71,85
€ 1,437 Each (In a Tube of 50) (su PVM)
50

€ 59,38
€ 1,188 Each (In a Tube of 50) (be PVM)
€ 71,85
€ 1,437 Each (In a Tube of 50) (su PVM)
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 1,188 | € 59,38 |
100 - 200 | € 1,092 | € 54,62 |
250+ | € 1,045 | € 52,25 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™ 3
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.57mm
Ilgis
10.36mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
15.95mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.