Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
0.75mm
Serija
OptiMOS
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,941
Each (In a Pack of 20) (be PVM)
€ 1,139
Each (In a Pack of 20) (su PVM)
20
€ 0,941
Each (In a Pack of 20) (be PVM)
€ 1,139
Each (In a Pack of 20) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 20 - 180 | € 0,941 | € 18,82 |
| 200+ | € 0,718 | € 14,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
0.75mm
Serija
OptiMOS
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products