Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
302 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PG-TO263-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 1 634,00
€ 2,042 Each (On a Reel of 800) (be PVM)
€ 1 977,14
€ 2,471 Each (On a Reel of 800) (su PVM)
800
€ 1 634,00
€ 2,042 Each (On a Reel of 800) (be PVM)
€ 1 977,14
€ 2,471 Each (On a Reel of 800) (su PVM)
800
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
302 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PG-TO263-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products