Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™ -T2
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Plotis
6.22mm
Ilgis
6.5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
2.3mm
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 2 493,75
€ 0,998 Each (On a Reel of 2500) (be PVM)
€ 3 017,44
€ 1,207 Each (On a Reel of 2500) (su PVM)
2500

€ 2 493,75
€ 0,998 Each (On a Reel of 2500) (be PVM)
€ 3 017,44
€ 1,207 Each (On a Reel of 2500) (su PVM)
2500

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Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOS™ -T2
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Plotis
6.22mm
Ilgis
6.5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
2.3mm
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.