N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
800 V
Serija
CoolMOS™ CE
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.4 Ω
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
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€ 0,589
Each (On a Reel of 2500) (be PVM)
€ 0,713
Each (On a Reel of 2500) (su PVM)
2500
€ 0,589
Each (On a Reel of 2500) (be PVM)
€ 0,713
Each (On a Reel of 2500) (su PVM)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
800 V
Serija
CoolMOS™ CE
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.4 Ω
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products