N-Channel MOSFET, 14.7 A, 650 V, 3-Pin DPAK Infineon IPD60R400CEATMA1

RS kodas: 130-0900Gamintojas: InfineonGamintojo kodas: IPD60R400CEATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

14.7 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

112 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Aukštis

2.41mm

Serija

CoolMOS CE

Minimali darbinė temperatūra

-40 °C

Forward Diode Voltage

0.9V

Produkto aprašymas

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 14.7 A, 650 V, 3-Pin DPAK Infineon IPD60R400CEATMA1
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P.O.A.

N-Channel MOSFET, 14.7 A, 650 V, 3-Pin DPAK Infineon IPD60R400CEATMA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

14.7 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

112 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Aukštis

2.41mm

Serija

CoolMOS CE

Minimali darbinė temperatūra

-40 °C

Forward Diode Voltage

0.9V

Produkto aprašymas

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more