N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Infineon IPD60R1K0CEAUMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
61 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Aukštis
2.41mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,251
Each (In a Pack of 25) (be PVM)
€ 0,304
Each (In a Pack of 25) (su PVM)
25
€ 0,251
Each (In a Pack of 25) (be PVM)
€ 0,304
Each (In a Pack of 25) (su PVM)
25
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
61 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Aukštis
2.41mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products