Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1

RS kodas: 222-4669PGamintojas: InfineonGamintojo kodas: IPD60N10S4L12ATMA1
brand-logo
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

100 V

Serija

OptiMOS™

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Sandėlio informacija laikinai nepasiekiama.

€ 52,25

€ 1,045 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 63,22

€ 1,264 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 52,25

€ 1,045 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 63,22

€ 1,264 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Ritė
50 - 90€ 1,045€ 10,45
100 - 240€ 0,998€ 9,98
250 - 490€ 0,94€ 9,40
500+€ 0,874€ 8,74

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

100 V

Serija

OptiMOS™

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more