N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1

RS kodas: 171-1948Gamintojas: InfineonGamintojo kodas: IPD600N25N3GATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Serija

IPD600N25N3 G

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

7.47mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Aukštis

2.41mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 2,572

Each (In a Pack of 10) (be PVM)

€ 3,112

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 2,572

Each (In a Pack of 10) (be PVM)

€ 3,112

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 10€ 2,572€ 25,72
20 - 40€ 2,152€ 21,52
50 - 90€ 1,995€ 19,95
100 - 240€ 1,89€ 18,90
250+€ 1,732€ 17,32

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Serija

IPD600N25N3 G

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

7.47mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Aukštis

2.41mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more