Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1

RS kodas: 826-9109Gamintojas: InfineonGamintojo kodas: IPD50P04P4-13
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Serija

OptiMOS P

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

12.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

2.3mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 28,50

€ 1,14 Each (In a Pack of 25) (be PVM)

€ 34,48

€ 1,379 Each (In a Pack of 25) (su PVM)

Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 25.

Gamyba -

Galima įsigyti kartotiną kiekį 25.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

25

Galima įsigyti kartotiną kiekį 25
25€ 28,50
50€ 44,08
75€ 66,12
100€ 88,16
125€ 102,96
150€ 123,55
175€ 144,14
200€ 164,73
225€ 185,32
250€ 191,90
275€ 211,09
300€ 230,28
325€ 249,47
350€ 268,66
375€ 287,85
sticker-462

€ 28,50

€ 1,14 Each (In a Pack of 25) (be PVM)

€ 34,48

€ 1,379 Each (In a Pack of 25) (su PVM)

Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 25.

Gamyba -

Galima įsigyti kartotiną kiekį 25.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

25

Galima įsigyti kartotiną kiekį 25
25€ 28,50
50€ 44,08
75€ 66,12
100€ 88,16
125€ 102,96
150€ 123,55
175€ 144,14
200€ 164,73
225€ 185,32
250€ 191,90
275€ 211,09
300€ 230,28
325€ 249,47
350€ 268,66
375€ 287,85
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
25 - 25€ 1,14€ 28,50
50 - 100€ 0,882€ 22,04
125 - 225€ 0,824€ 20,59
250 - 600€ 0,768€ 19,19
625+€ 0,711€ 17,76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Serija

OptiMOS P

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

12.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

2.3mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more