N-Channel MOSFET, 50 A, 100 V, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1

RS kodas: 170-2270Gamintojas: InfineonGamintojo kodas: IPD50N10S3L16ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + 2 Tab

Maximum Drain Source Resistance

19.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

7.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.5mm

Aukštis

2.3mm

Serija

IPD50N10S3L-16

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

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€ 0,867

Each (On a Reel of 2500) (be PVM)

€ 1,049

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 50 A, 100 V, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1
sticker-462

€ 0,867

Each (On a Reel of 2500) (be PVM)

€ 1,049

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 50 A, 100 V, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + 2 Tab

Maximum Drain Source Resistance

19.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

7.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.5mm

Aukštis

2.3mm

Serija

IPD50N10S3L-16

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more