N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1

RS kodas: 171-1945Gamintojas: InfineonGamintojo kodas: IPD200N15N3GATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Pakuotės tipas

DPAK (TO-252)

Serija

IPD200N15N3 G

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Ilgis

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Plotis

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

4.57mm

Minimali darbinė temperatūra

-55 °C

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€ 2,625

Each (In a Pack of 10) (be PVM)

€ 3,176

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 2,625

Each (In a Pack of 10) (be PVM)

€ 3,176

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 10€ 2,625€ 26,25
20 - 40€ 2,10€ 21,00
50 - 90€ 1,942€ 19,42
100 - 240€ 1,838€ 18,38
250+€ 1,68€ 16,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Pakuotės tipas

DPAK (TO-252)

Serija

IPD200N15N3 G

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Ilgis

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Plotis

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

4.57mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more