N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD068N10N3GATMA1

RS kodas: 171-1939Gamintojas: InfineonGamintojo kodas: IPD068N10N3GATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Serija

IPD068N10N3 G

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

12.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Plotis

7.47mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

2.41mm

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€ 1,018

Each (In a Pack of 10) (be PVM)

€ 1,232

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD068N10N3GATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 1,018

Each (In a Pack of 10) (be PVM)

€ 1,232

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD068N10N3GATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Serija

IPD068N10N3 G

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

12.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Plotis

7.47mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

2.41mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more