Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1

RS Stock No.: 262-5867PBrand: InfineonManufacturers Part No.: IPD038N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

€ 75.24

€ 0.752 Each (Supplied on a Reel) (Exc. Vat)

€ 91.04

€ 0.91 Each (Supplied on a Reel) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Select packaging type
sticker-462

€ 75.24

€ 0.752 Each (Supplied on a Reel) (Exc. Vat)

€ 91.04

€ 0.91 Each (Supplied on a Reel) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
sticker-462

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Reel
100 - 240€ 0.752€ 7.52
250 - 490€ 0.721€ 7.21
500 - 990€ 0.69€ 6.90
1000+€ 0.436€ 4.36

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more