Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO252-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,845
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,023
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
€ 0,845
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,023
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 10 - 90 | € 0,845 | € 8,45 |
| 100 - 240 | € 0,802 | € 8,02 |
| 250 - 490 | € 0,77 | € 7,70 |
| 500 - 990 | € 0,736 | € 7,36 |
| 1000+ | € 0,465 | € 4,65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO252-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products