Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
28 nC @ 4.5 V
Plotis
6.22mm
Transistor Material
Si
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Aukštis
2.41mm
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,312
Each (In a Pack of 25) (be PVM)
€ 1,588
Each (In a Pack of 25) (su PVM)
25
€ 1,312
Each (In a Pack of 25) (be PVM)
€ 1,588
Each (In a Pack of 25) (su PVM)
25
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
25 - 75 | € 1,312 | € 32,81 |
100 - 475 | € 1,021 | € 25,52 |
500 - 1225 | € 0,906 | € 22,65 |
1250 - 2475 | € 0,713 | € 17,82 |
2500+ | € 0,662 | € 16,54 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
28 nC @ 4.5 V
Plotis
6.22mm
Transistor Material
Si
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Aukštis
2.41mm
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.