Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1

RS Stock No.: 262-5865Brand: InfineonManufacturers Part No.: IPD029N04NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

€ 5.22

€ 1.045 Each (In a Pack of 5) (Exc. Vat)

€ 6.32

€ 1.264 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
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sticker-462

€ 5.22

€ 1.045 Each (In a Pack of 5) (Exc. Vat)

€ 6.32

€ 1.264 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
sticker-462

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 45€ 1.045€ 5.22
50 - 120€ 0.929€ 4.65
125 - 245€ 0.876€ 4.38
250 - 495€ 0.813€ 4.07
500+€ 0.417€ 2.09

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more