Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PG-TO252-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 5,50
€ 1,10 Each (In a Pack of 5) (be PVM)
€ 6,66
€ 1,331 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 5,50
€ 1,10 Each (In a Pack of 5) (be PVM)
€ 6,66
€ 1,331 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 1,10 | € 5,50 |
| 50 - 120 | € 0,978 | € 4,89 |
| 125 - 245 | € 0,922 | € 4,61 |
| 250 - 495 | € 0,856 | € 4,28 |
| 500+ | € 0,439 | € 2,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PG-TO252-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products