Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO252-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,628
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,97
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
€ 1,628
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,97
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 5 - 45 | € 1,628 | € 8,14 |
| 50 - 120 | € 1,365 | € 6,82 |
| 125 - 245 | € 1,26 | € 6,30 |
| 250 - 495 | € 1,155 | € 5,78 |
| 500+ | € 0,901 | € 4,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO252-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products