N-Channel MOSFET, 15 A, 900 V, 3-Pin D2PAK Infineon IPB90R340C3ATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.31mm
Typical Gate Charge @ Vgs
94 nC @ 10 V
Plotis
9.45mm
Transistor Material
Si
Serija
CoolMOS C3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
4.57mm
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 4,845
Each (In a Pack of 4) (be PVM)
€ 5,862
Each (In a Pack of 4) (su PVM)
Standartas
4
€ 4,845
Each (In a Pack of 4) (be PVM)
€ 5,862
Each (In a Pack of 4) (su PVM)
Standartas
4
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.31mm
Typical Gate Charge @ Vgs
94 nC @ 10 V
Plotis
9.45mm
Transistor Material
Si
Serija
CoolMOS C3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
4.57mm
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products