Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31.2 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 2,350.00
€ 2.35 Each (On a Reel of 1000) (Exc. Vat)
€ 2,843.50
€ 2.844 Each (On a Reel of 1000) (inc. VAT)
1000
€ 2,350.00
€ 2.35 Each (On a Reel of 1000) (Exc. Vat)
€ 2,843.50
€ 2.844 Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31.2 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.11 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products