Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
23.8 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
176 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Number of Elements per Chip
1
Ilgis
10.31mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.45mm
Serija
CoolMOS P6
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 3,78
Each (In a Pack of 2) (be PVM)
€ 4,574
Each (In a Pack of 2) (su PVM)
2
€ 3,78
Each (In a Pack of 2) (be PVM)
€ 4,574
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
2 - 8 | € 3,78 | € 7,56 |
10 - 98 | € 3,202 | € 6,40 |
100 - 498 | € 2,782 | € 5,56 |
500 - 998 | € 2,362 | € 4,72 |
1000+ | € 2,152 | € 4,30 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
23.8 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
176 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Number of Elements per Chip
1
Ilgis
10.31mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.45mm
Serija
CoolMOS P6
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.