N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1

RS kodas: 171-1943Gamintojas: InfineonGamintojo kodas: IPB180N10S402ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Serija

IPB180N10S4-02

Pakuotės tipas

TO-263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7 + Tab

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

10.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10mm

Typical Gate Charge @ Vgs

156 nC @ 10 V

Aukštis

4.4mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 6,09

Each (In a Pack of 5) (be PVM)

€ 7,369

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 6,09

Each (In a Pack of 5) (be PVM)

€ 7,369

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 6,09€ 30,45
25 - 95€ 5,145€ 25,72
100 - 245€ 4,462€ 22,31
250 - 495€ 4,20€ 21,00
500+€ 3,78€ 18,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Serija

IPB180N10S4-02

Pakuotės tipas

TO-263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7 + Tab

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

10.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10mm

Typical Gate Charge @ Vgs

156 nC @ 10 V

Aukštis

4.4mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more