N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 Infineon IPB065N15N3GATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
150 V
Pakuotės tipas
D2PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
10.31mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.45mm
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,255
Each (On a Reel of 1000) (be PVM)
€ 3,939
Each (On a Reel of 1000) (su PVM)
1000
€ 3,255
Each (On a Reel of 1000) (be PVM)
€ 3,939
Each (On a Reel of 1000) (su PVM)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
150 V
Pakuotės tipas
D2PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Ilgis
10.31mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.45mm
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products