Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO263-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Sandėlio informacija laikinai nepasiekiama.
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€ 1,942
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 2,35
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
€ 1,942
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 2,35
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 5 - 45 | € 1,942 | € 9,71 |
| 50 - 120 | € 1,785 | € 8,92 |
| 125 - 245 | € 1,68 | € 8,40 |
| 250 - 495 | € 1,522 | € 7,61 |
| 500+ | € 1,418 | € 7,09 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO263-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products