N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1

RS kodas: 171-1955Gamintojas: InfineonGamintojo kodas: IPB020N10N5ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO 263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

11.05mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

168 nC @ 10 V

Ilgis

10.31mm

Maksimali darbinė temperatūra

+175 °C

Serija

IPB020N10N5

Minimali darbinė temperatūra

-55 °C

Aukštis

4.57mm

Forward Diode Voltage

1.2V

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€ 7,245

Each (In a Pack of 5) (be PVM)

€ 8,766

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 7,245

Each (In a Pack of 5) (be PVM)

€ 8,766

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 7,245€ 36,22
25 - 95€ 6,09€ 30,45
100 - 245€ 5,355€ 26,78
250 - 495€ 5,04€ 25,20
500+€ 4,515€ 22,58

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO 263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

11.05mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

168 nC @ 10 V

Ilgis

10.31mm

Maksimali darbinė temperatūra

+175 °C

Serija

IPB020N10N5

Minimali darbinė temperatūra

-55 °C

Aukštis

4.57mm

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more