Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO263-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
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€ 1,852
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 2,241
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
€ 1,852
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 2,241
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 25 - 45 | € 1,852 | € 9,26 |
| 50 - 120 | € 1,71 | € 8,55 |
| 125 - 245 | € 1,615 | € 8,08 |
| 250+ | € 1,472 | € 7,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
PG-TO263-3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products