N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1

RS kodas: 171-1965Gamintojas: InfineonGamintojo kodas: IPB017N10N5ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Serija

IPB017N10N5

Pakuotės tipas

TO-263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7 + Tab

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

11.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Aukštis

4.57mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 8,085

Each (In a Pack of 5) (be PVM)

€ 9,783

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 8,085

Each (In a Pack of 5) (be PVM)

€ 9,783

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 8,085€ 40,42
25 - 95€ 6,93€ 34,65
100 - 245€ 5,985€ 29,92
250 - 495€ 5,67€ 28,35
500+€ 5,04€ 25,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Serija

IPB017N10N5

Pakuotės tipas

TO-263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7 + Tab

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

11.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Aukštis

4.57mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more