Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
40 V
Serija
OptiMOS™ 3
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.0015 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1 700,00
€ 1,70 Each (On a Reel of 1000) (be PVM)
€ 2 057,00
€ 2,057 Each (On a Reel of 1000) (su PVM)
1000
€ 1 700,00
€ 1,70 Each (On a Reel of 1000) (be PVM)
€ 2 057,00
€ 2,057 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
40 V
Serija
OptiMOS™ 3
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.0015 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products