Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Serija
CoolMOS CE
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
11.3mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Aukštis
16.27mm
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,418
Each (In a Pack of 5) (be PVM)
€ 1,716
Each (In a Pack of 5) (su PVM)
5
€ 1,418
Each (In a Pack of 5) (be PVM)
€ 1,716
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 45 | € 1,418 | € 7,09 |
50 - 120 | € 1,26 | € 6,30 |
125 - 245 | € 1,155 | € 5,78 |
250 - 495 | € 1,102 | € 5,51 |
500+ | € 1,012 | € 5,06 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Serija
CoolMOS CE
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
11.3mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Aukštis
16.27mm
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.