N-Channel MOSFET, 8 A, 800 V, 3+Tab-Pin TO-220FP Infineon IPA80R650CEXKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3+Tab
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
45 nC @ 10 V
Transistor Material
Si
Ilgis
10.65mm
Aukštis
16.15mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
1V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 1,942
Each (In a Pack of 5) (be PVM)
€ 2,35
Each (In a Pack of 5) (su PVM)
5
€ 1,942
Each (In a Pack of 5) (be PVM)
€ 2,35
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 1,942 | € 9,71 |
| 25 - 120 | € 1,628 | € 8,14 |
| 125 - 245 | € 1,365 | € 6,82 |
| 250+ | € 1,102 | € 5,51 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3+Tab
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
45 nC @ 10 V
Transistor Material
Si
Ilgis
10.65mm
Aukštis
16.15mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
1V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products