N-Channel MOSFET, 14.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPA60R400CEXKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
14.7 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3 + Tab
Maximum Drain Source Resistance
890 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.65mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Aukštis
16.15mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1,89
Each (In a Pack of 5) (be PVM)
€ 2,287
Each (In a Pack of 5) (su PVM)
5
€ 1,89
Each (In a Pack of 5) (be PVM)
€ 2,287
Each (In a Pack of 5) (su PVM)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
14.7 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3 + Tab
Maximum Drain Source Resistance
890 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.65mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Aukštis
16.15mm
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products