Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
770 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.65mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Plotis
4.9mm
Number of Elements per Chip
1
Aukštis
16.15mm
Serija
CoolMOS P6
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,31
Each (In a Pack of 5) (be PVM)
€ 2,795
Each (In a Pack of 5) (su PVM)
5
€ 2,31
Each (In a Pack of 5) (be PVM)
€ 2,795
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 20 | € 2,31 | € 11,55 |
25 - 45 | € 2,205 | € 11,02 |
50 - 120 | € 1,942 | € 9,71 |
125 - 245 | € 1,785 | € 8,92 |
250+ | € 1,68 | € 8,40 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
770 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
10.65mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Plotis
4.9mm
Number of Elements per Chip
1
Aukštis
16.15mm
Serija
CoolMOS P6
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.