Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
24.8 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Plotis
4.9mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.65mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Number of Elements per Chip
1
Aukštis
16.15mm
Forward Diode Voltage
0.85V
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,208
Each (In a Tube of 500) (be PVM)
€ 1,462
Each (In a Tube of 500) (su PVM)
500
€ 1,208
Each (In a Tube of 500) (be PVM)
€ 1,462
Each (In a Tube of 500) (su PVM)
500
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
500 - 2000 | € 1,208 | € 603,75 |
2500 - 4500 | € 1,026 | € 512,92 |
5000+ | € 1,00 | € 499,80 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
24.8 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Plotis
4.9mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.65mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Number of Elements per Chip
1
Aukštis
16.15mm
Forward Diode Voltage
0.85V
Serija
CoolMOS CE
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.