Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Serija
OptiMOS™ 3
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.85mm
Ilgis
10.65mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
41 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 199,50
€ 3,99 Each (In a Tube of 50) (be PVM)
€ 241,40
€ 4,828 Each (In a Tube of 50) (su PVM)
50

€ 199,50
€ 3,99 Each (In a Tube of 50) (be PVM)
€ 241,40
€ 4,828 Each (In a Tube of 50) (su PVM)
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 3,99 | € 199,50 |
100 - 200 | € 3,80 | € 190,00 |
250+ | € 3,562 | € 178,12 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Serija
OptiMOS™ 3
Pakuotės tipas
TO-220 FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.85mm
Ilgis
10.65mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
41 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.