Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
650 V
Serija
CoolSiC MOSFET 650 V G1
Pakuotės tipas
PG-HSOF-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
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P.O.A.
1 Reel of 1 (be PVM)
2000
P.O.A.
1 Reel of 1 (be PVM)
2000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
650 V
Serija
CoolSiC MOSFET 650 V G1
Pakuotės tipas
PG-HSOF-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products