Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
P
Kaiščių skaičius
4
Switching Speed
100kHz
Transistor Configuration
Single
Matmenys
16.3 x 5.21 x 21.1mm
Maksimali darbinė temperatūra
+175 °C
Energy Rating
1.11mJ
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
4300pF
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€ 8,61
Each (In a Tube of 30) (be PVM)
€ 10,418
Each (In a Tube of 30) (su PVM)
30
€ 8,61
Each (In a Tube of 30) (be PVM)
€ 10,418
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 30 - 30 | € 8,61 | € 258,30 |
| 60 - 120 | € 8,295 | € 248,85 |
| 150+ | € 7,98 | € 239,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
P
Kaiščių skaičius
4
Switching Speed
100kHz
Transistor Configuration
Single
Matmenys
16.3 x 5.21 x 21.1mm
Maksimali darbinė temperatūra
+175 °C
Energy Rating
1.11mJ
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
4300pF
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products