Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
30kHz
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
4500pF
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 6,825
Each (In a Pack of 10) (be PVM)
€ 8,258
Each (In a Pack of 10) (su PVM)
10
€ 6,825
Each (In a Pack of 10) (be PVM)
€ 8,258
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
10 - 10 | € 6,825 | € 68,25 |
20 - 40 | € 6,51 | € 65,10 |
50 - 90 | € 6,195 | € 61,95 |
100 - 190 | € 5,88 | € 58,80 |
200+ | € 5,46 | € 54,60 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
30kHz
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
4500pF
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.