Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
312 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
China
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 5,04
Each (In a Tube of 30) (be PVM)
€ 6,098
Each (In a Tube of 30) (su PVM)
30
€ 5,04
Each (In a Tube of 30) (be PVM)
€ 6,098
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
30 - 30 | € 5,04 | € 151,20 |
60 - 120 | € 4,83 | € 144,90 |
150+ | € 4,672 | € 140,18 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
312 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.13 x 5.21 x 21.1mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
China
Produkto aprašymas
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.