Technical Document
Specifications
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
SPI
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Maximum Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+85 °C
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 12.75
€ 2.55 Each (In a Pack of 5) (Exc. Vat)
€ 15.43
€ 3.086 Each (In a Pack of 5) (inc. VAT)
Standard
5

€ 12.75
€ 2.55 Each (In a Pack of 5) (Exc. Vat)
€ 15.43
€ 3.086 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5

Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 10 | € 2.55 | € 12.75 |
| 15 - 25 | € 2.00 | € 10.00 |
| 30 - 95 | € 1.95 | € 9.75 |
| 100 - 495 | € 1.75 | € 8.75 |
| 500+ | € 1.70 | € 8.50 |
Technical Document
Specifications
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
SPI
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Maximum Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+85 °C
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.


