Infineon 4Mbit Parallel FRAM Memory 44-Pin TSOP, FM22L16-55-TG
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
4Mbit
Organisation
256K x 16 bit
Interface Type
Parallel
Maximum Random Access Time
55ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
TSOP
Kaiščių skaičius
44
Matmenys
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Maksimali darbinė temperatūra
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
16bit
Number of Words
256K
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Patikrinkite dar kartą.
€ 38,64
už 1 vnt. (be PVM)
€ 46,75
už 1 vnt. (su PVM)
1
€ 38,64
už 1 vnt. (be PVM)
€ 46,75
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 38,64 |
| 10 - 49 | € 35,80 |
| 50 - 99 | € 33,60 |
| 100 - 499 | € 31,08 |
| 500+ | € 30,34 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
4Mbit
Organisation
256K x 16 bit
Interface Type
Parallel
Maximum Random Access Time
55ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
TSOP
Kaiščių skaičius
44
Matmenys
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Maksimali darbinė temperatūra
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
16bit
Number of Words
256K
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products