Infineon Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray FF2600UXTR33T2M1BPSA1

RS kodas: 277-195Gamintojas: InfineonGamintojo kodas: FF2600UXTR33T2M1BPSA1
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

720 A

Maximum Drain Source Voltage

3300 V

Pakuotės tipas

Tray

Serija

XHP

Tvirtinimo tipas

Screw Mount

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Kilmės šalis

Germany

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P.O.A.

Infineon Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray FF2600UXTR33T2M1BPSA1

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sticker-462

P.O.A.

Infineon Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray FF2600UXTR33T2M1BPSA1
Sandėlio informacija laikinai nepasiekiama.

1

Galima įsigyti kartotiną kiekį 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

720 A

Maximum Drain Source Voltage

3300 V

Pakuotės tipas

Tray

Serija

XHP

Tvirtinimo tipas

Screw Mount

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Kilmės šalis

Germany

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more