Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.05 kW
Configuration
Series
Pakuotės tipas
ECONOD
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
11
Switching Speed
1MHz
Transistor Configuration
Series
Matmenys
122.1 x 62 x 17mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+125 °C
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 104,48
už 1 vnt. (be PVM)
€ 126,42
už 1 vnt. (su PVM)
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€ 104,48
už 1 vnt. (be PVM)
€ 126,42
už 1 vnt. (su PVM)
1
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Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.05 kW
Configuration
Series
Pakuotės tipas
ECONOD
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
11
Switching Speed
1MHz
Transistor Configuration
Series
Matmenys
122.1 x 62 x 17mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+125 °C
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.