Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
225 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
4
Maximum Power Dissipation
20 mW
Configuration
Single Collector, Single Emitter, Single Gate
Pakuotės tipas
AG-62MMHB
Tvirtinimo tipas
Through Hole
Channel Type
N
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P.O.A.
Each (In a Tray of 8) (be PVM)
8
P.O.A.
Each (In a Tray of 8) (be PVM)
8
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Patikrinkite dar kartą.
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
225 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
4
Maximum Power Dissipation
20 mW
Configuration
Single Collector, Single Emitter, Single Gate
Pakuotės tipas
AG-62MMHB
Tvirtinimo tipas
Through Hole
Channel Type
N
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products