Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0909NDXTMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOSTM3
Pakuotės tipas
PQFN 3 x 3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.018 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 0,919
Each (On a Reel of 5000) (be PVM)
€ 1,112
Each (On a Reel of 5000) (su PVM)
5000
€ 0,919
Each (On a Reel of 5000) (be PVM)
€ 1,112
Each (On a Reel of 5000) (su PVM)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
30 V
Serija
OptiMOSTM3
Pakuotės tipas
PQFN 3 x 3
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.018 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products