P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2

RS kodas: 911-4842Gamintojas: InfineonGamintojo kodas: BSS84PH6327XTSA2
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Aukštis

1mm

Serija

SIPMOS

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,06

Each (On a Reel of 3000) (be PVM)

€ 0,073

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 179,55
6000€ 359,10
9000€ 538,65
12000€ 718,20
15000€ 897,75
18000€ 1 077,30
21000€ 1 256,85
24000€ 1 436,40
27000€ 1 615,95
30000€ 1 795,50
33000€ 1 975,05
36000€ 2 154,60
39000€ 2 334,15
42000€ 2 513,70
45000€ 2 693,25
sticker-462

€ 0,06

Each (On a Reel of 3000) (be PVM)

€ 0,073

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 179,55
6000€ 359,10
9000€ 538,65
12000€ 718,20
15000€ 897,75
18000€ 1 077,30
21000€ 1 256,85
24000€ 1 436,40
27000€ 1 615,95
30000€ 1 795,50
33000€ 1 975,05
36000€ 2 154,60
39000€ 2 334,15
42000€ 2 513,70
45000€ 2 693,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Aukštis

1mm

Serija

SIPMOS

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more